TLP2200 2002-09-25 1 toshiba photocoupler gaa ? as ired & photo-ic TLP2200 isolated buss driver high speed line receiver micropocessor system interfaces mos fet gate driver direct replacement for hcpl ? 2200 the toshiba TLP2200 consists of a gaa ? as light emitting diode and integrated high gain, high speed photodetector. this unit is 8 ? lead dip package. the detector has a three state output stage that eliminates the need for pull ? up resistor, and built ? in schmitt trigger. the detector ic has an internal shield that provides a guaranteed common mode transient immunity of 1 000v / s. input current: i f = 1 .6ma power supply voltage: v cc = 4.5~20v switching speed: 2.5mbd guaranteed common mode transient immunity: 1 000v / s (min.) guaranteed performance over temp: 0~85c isolation voltage: 2500vrms(min.) ul recognized: ul 1 577, file no. e67349 truth table (positive logic) input enable output h h z l h z h l h l l l unit in mm toshiba 11 ? 10c4 weight: 0.54 g pin configuration (top view) 1: n.c. 2: anode 3: cathode 4: n.c. 5: gnd 6: v e (enable) 7: v o (output) 8: v cc v cc gnd shield 1 2 3 4 8 7 6 5 schematic i f v f 2 3 shield v cc v o v e gnd 8 7 6 5 i cc i o i e
TLP2200 2002-09-25 2 recommended operating conditions characteristic symbol min. typ. max. unit input current, on i f(on) 1.6 D 5 ma input current, off i f(off) 0 D 0.1 ma supply voltage v cc 4.5 D 20 v enable voltage high v eh 2.0 D 20 v enable voltage low v el 0 D 0.8 v fan out (ttl load) n D D 4 D operating temperature t opr 0 D 85 c absolute maximum ratings (no derating required up to 70c) characteristic symbol rating unit forward current i f 10 ma peak transient forward current (note 1) i fpt 1 a led reverse voltage v r 5 v output current i o 25 ma supply voltage v cc 0.5~20 v output voltage v o 0.5~20 v three state enable voltage v e 0.5~20 v detector total package power dissipation (note 2) p t 210 mw operating temperature range t opr 40~85 c storage temperature range t stg 55~125 c lead solder temperature (10s) (**) t sol 260 c isolation voltage (ac 1min., r.h. 60%,ta = 25c) (note 3) bv s 2500 vrms (note 1) pulse width 1s 300pps. (note 2) derate 4.5mw / c above 70c ambient temperature. (note 3) device considered a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted together (**) 1.6mm below seating plane.
TLP2200 2002-09-25 3 electrical characteristics (unless otherwise specified, ta = 0~85c,v cc = 4.5~20v , i f(on) = 1.6~5ma, i f(off) = 0~0.1ma, v el = 0~0.8v,v eh = 2.0~20v) characteristic symbol test condition min. typ.* max. unit v o = 5.5v D D 100 output leakage current (v o > v cc ) i ohh i f = 5ma, v cc = 4.5v v o = 20v D 2 500 a logic low output voltage v ol i ol = 6.4ma (4 ttl load) D 0.32 0.5 v logic high output voltage v oh i oh = 2.6ma 2.4 3.4 D v logic low enable current i el v e = 0.4v D 0.13 0.32 ma v e = 2.7v D D 20 v e = 5.5v D D 100 logic high enable current i eh v e = 20v D 0.01 250 a logic low enable voltage v el D D D 0.8 v logic high enable voltage v eh D 2.0 D D v v cc = 5.5v D 5 6.0 logic low supply current i ccl i f = 0ma v e = don't care v cc = 20v D 5.6 7.5 ma v cc = 5.5v D 2.5 4.5 logic high supply current i cch i f = 5ma v e = don't care v cc = 20v D 2.8 6.0 ma i ozl i f = 5ma v e = 2v v o = 0.4v D 1 20 v o = 2.4v D D 20 v o = 5.5v D D 100 high impedance state output current i ozh i f = 0ma v e = 2v v o = 20v D 0.01 500 a v o = v cc = 5.5v 25 55 D logic low short circuit output current (note 4) i osl i f = 0ma v o = v cc = 20v 40 80 D ma v cc = 5.5v 10 25 D logic high short circuit output current (note 4) i osh i f = 5ma v o = gnd v cc = 20v 25 60 D ma input current hysteresis i hys v cc = 5v D 0.05 D ma input forward voltage v f i f = 5ma, ta = 25c D 1.55 1.7 v temperature coefficient of forward voltage ? v f / ? ta i f = 5ma D 2.0 D mv / c input reverse breakdown voltage bv r i r = 10 a, ta = 25c 5 D D v input capacitance c in v f = 0v, f = 1mhz, ta = 25c D 45 D pf resistance (input output) r i o v i o = 500v r.h. 60% (note 3) 510 10 10 14 D capacitance (input output) c i o v i o = 0v, f = 1mhz (note 3) D 0.6 D pf (**) all typ. values are at ta = 25c, v cc = 5v, i f(on) = 3ma unless otherwise specified.
TLP2200 2002-09-25 4 switching characteristics (unless otherwise specified, ta = 0~85c,v cc = 4.5~20v,i f(on) = 1.6~5ma,i f(off) = 0~0.1ma) characteristic symbol test cir cuit test condition min. typ. max. unit without peaking capacitor c 1 D 235 D propagation delay time to logic high output level (note 5) t plh with peaking capacitor c 1 D D 400 ns without peaking capacitor c 1 D 250 D propagation delay time to logic low output level (note 5) t phl with peaking capacitor c 1 D D 400 ns output rise time (10 90%) t r D 35 D ns output fall time (90 10%) t f 1 D D 20 D ns output enable time to logic high t pzh D D D D ns output enable time to logic low t pzl D D D D ns output disable time from logic high t phz D D D D ns output disable time from logic low t plz 2 D D D D ns common mode transient immunity at logic high output (note 6) cm h i f = 1.6ma, v cm = 50v, ta = 25c 1000 D D v / s common mode transient immunity at logic low output (note 6) cm l 3 i f = 0ma, v cm = 50v, ta = 25c 1000 D D v / s (*) all typ. values are at ta = 25c, v cc = 5v, i f(on) = 3ma unless otherwise specified. (note 4) duration of output short circuit time should not exceed 10ms. (note 5) the t plh propagation delay is measured from the 50% point on the leading edge of the input pulse to the 1.3v point on the leading edge of the output pulse. the t phl propagation delay is measured from the 50% point on the trailing edge of the input pulse to the 1.3v point on the trailing edge of the output pulse. (note 6) cm l is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic low state (v o 0.8v). cm h is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic high state (v o 2.0v).
TLP2200 2002-09-25 5 test circuit 1 t phl , t plh , t r and t f test circuit 2 t phz , t pzh , t plz and t pzl output v o i f (on) 50% 0ma 10% 90% input i f t p lh t p hl v oh v ol t r t f 1.3v c 1 is peaking capacitor. the probe and jig capacitances are include in c 1 . c l is approximately 15pf which includes probe and stray wiring capacitance. r 1 2.15k ? 1.1k ? 681 ? i f (on) 1.6ma 3ma 5ma v cc gnd input monitoring node 1 2 3 4 8 7 6 5 v cc d2 d3 d4 d1 c l c1=120pf output v o monitoring node d1~d4 1s1588 5v : 619 ? 5k ? r 1 pulse generator t r = t f = 5ns v o = 5v output v o i f =i f (on) input v e output v o i f =i f (off) s1 open s2 closed s1 closed s2 open t p zl 1.3v 0v t p hz t p zh 0.5v 1.3v t p lz 0.5v s1 and s2 closed 3.0v 1.3v 0v s1 and s2 closed v oh 1.5v v ol ~ ~ c l is approximately 15pf which includes probe and stray wiring capacitance. v cc gnd input v e monitoring node 1 2 3 4 8 7 6 5 v cc d2 d3 d4 d1 c l v o d1~d4 1s1588 5v : 619 ? 5k ? i f pulse generator z o = 50 ? t r = t f = 5ns s2 s1
TLP2200 2002-09-25 6 test circuit 3 common mode transient immunity 50v v cm 0v 90% 10% t r t f v oh v o (min.) (*) output v o v o (max.) (*) v ol switch at a: i f = 1.6ma (*) see note6 switch at b: i f = 0ma v cc gnd 1 2 3 4 8 7 6 5 v cc + 0.1f b yp ass v cm a output v o monitor- ing node i f b v ff pulse gen. z o = 50 ?
TLP2200 2002-09-25 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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